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calatom software  (MathWorks Inc)


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    MathWorks Inc calatom software
    HAADF-STEM images (left) and corresponding atomic positions of Se (right, identified by <t>Calatom</t> software) of InSe:Y before ( a ) and after ( b ) in-situ biasing process, showing obvious electric field induced ripplocation formation and motion but without any atomic rearrangement of each single layer (left, inset). The arc arrows in ( b ) roughly mark the position where the ripplocation occurs. c SAED patterns of InSe:Y before (upper) and after (lower) in-situ biasing process. d Polar map (upper) of ( d ) with the arrows only showing the polarization directions (from anion to cation) with the schematic (lower) showing the influence of the ripplocation on the polarization switching. e , f Atomic-level zoom-in HAADF-STEM images marked with the polarization directions (upper) in ( d ) together with the simulated ones (lower) of two unit-cells of γ-InSe with totally reversed layer stacking and polarization states.
    Calatom Software, supplied by MathWorks Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/result/calatom software/product/MathWorks Inc
    Average 90 stars, based on 1 article reviews
    calatom software - by Bioz Stars, 2026-04
    90/100 stars

    Images

    1) Product Images from "Atomic-level polarization reversal in sliding ferroelectric semiconductors"

    Article Title: Atomic-level polarization reversal in sliding ferroelectric semiconductors

    Journal: Nature Communications

    doi: 10.1038/s41467-024-48218-z

    HAADF-STEM images (left) and corresponding atomic positions of Se (right, identified by Calatom software) of InSe:Y before ( a ) and after ( b ) in-situ biasing process, showing obvious electric field induced ripplocation formation and motion but without any atomic rearrangement of each single layer (left, inset). The arc arrows in ( b ) roughly mark the position where the ripplocation occurs. c SAED patterns of InSe:Y before (upper) and after (lower) in-situ biasing process. d Polar map (upper) of ( d ) with the arrows only showing the polarization directions (from anion to cation) with the schematic (lower) showing the influence of the ripplocation on the polarization switching. e , f Atomic-level zoom-in HAADF-STEM images marked with the polarization directions (upper) in ( d ) together with the simulated ones (lower) of two unit-cells of γ-InSe with totally reversed layer stacking and polarization states.
    Figure Legend Snippet: HAADF-STEM images (left) and corresponding atomic positions of Se (right, identified by Calatom software) of InSe:Y before ( a ) and after ( b ) in-situ biasing process, showing obvious electric field induced ripplocation formation and motion but without any atomic rearrangement of each single layer (left, inset). The arc arrows in ( b ) roughly mark the position where the ripplocation occurs. c SAED patterns of InSe:Y before (upper) and after (lower) in-situ biasing process. d Polar map (upper) of ( d ) with the arrows only showing the polarization directions (from anion to cation) with the schematic (lower) showing the influence of the ripplocation on the polarization switching. e , f Atomic-level zoom-in HAADF-STEM images marked with the polarization directions (upper) in ( d ) together with the simulated ones (lower) of two unit-cells of γ-InSe with totally reversed layer stacking and polarization states.

    Techniques Used: Software, In Situ



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    calatom software  (MathWorks Inc)
    90
    MathWorks Inc calatom software
    HAADF-STEM images (left) and corresponding atomic positions of Se (right, identified by <t>Calatom</t> software) of InSe:Y before ( a ) and after ( b ) in-situ biasing process, showing obvious electric field induced ripplocation formation and motion but without any atomic rearrangement of each single layer (left, inset). The arc arrows in ( b ) roughly mark the position where the ripplocation occurs. c SAED patterns of InSe:Y before (upper) and after (lower) in-situ biasing process. d Polar map (upper) of ( d ) with the arrows only showing the polarization directions (from anion to cation) with the schematic (lower) showing the influence of the ripplocation on the polarization switching. e , f Atomic-level zoom-in HAADF-STEM images marked with the polarization directions (upper) in ( d ) together with the simulated ones (lower) of two unit-cells of γ-InSe with totally reversed layer stacking and polarization states.
    Calatom Software, supplied by MathWorks Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/result/calatom software/product/MathWorks Inc
    Average 90 stars, based on 1 article reviews
    calatom software - by Bioz Stars, 2026-04
    90/100 stars
    		  Buy from Supplier
    calatom software based on custom matlab scripts  (MathWorks Inc)
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    HAADF-STEM images (left) and corresponding atomic positions of Se (right, identified by <t>Calatom</t> software) of InSe:Y before ( a ) and after ( b ) in-situ biasing process, showing obvious electric field induced ripplocation formation and motion but without any atomic rearrangement of each single layer (left, inset). The arc arrows in ( b ) roughly mark the position where the ripplocation occurs. c SAED patterns of InSe:Y before (upper) and after (lower) in-situ biasing process. d Polar map (upper) of ( d ) with the arrows only showing the polarization directions (from anion to cation) with the schematic (lower) showing the influence of the ripplocation on the polarization switching. e , f Atomic-level zoom-in HAADF-STEM images marked with the polarization directions (upper) in ( d ) together with the simulated ones (lower) of two unit-cells of γ-InSe with totally reversed layer stacking and polarization states.
    Calatom Software Based On Custom Matlab Scripts, supplied by MathWorks Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/result/calatom software based on custom matlab scripts/product/MathWorks Inc
    Average 90 stars, based on 1 article reviews
    calatom software based on custom matlab scripts - by Bioz Stars, 2026-04
    90/100 stars
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    matlab based software-calatom  (MathWorks Inc)
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    HAADF-STEM images (left) and corresponding atomic positions of Se (right, identified by <t>Calatom</t> software) of InSe:Y before ( a ) and after ( b ) in-situ biasing process, showing obvious electric field induced ripplocation formation and motion but without any atomic rearrangement of each single layer (left, inset). The arc arrows in ( b ) roughly mark the position where the ripplocation occurs. c SAED patterns of InSe:Y before (upper) and after (lower) in-situ biasing process. d Polar map (upper) of ( d ) with the arrows only showing the polarization directions (from anion to cation) with the schematic (lower) showing the influence of the ripplocation on the polarization switching. e , f Atomic-level zoom-in HAADF-STEM images marked with the polarization directions (upper) in ( d ) together with the simulated ones (lower) of two unit-cells of γ-InSe with totally reversed layer stacking and polarization states.
    Matlab Based Software Calatom, supplied by MathWorks Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/result/matlab based software-calatom/product/MathWorks Inc
    Average 90 stars, based on 1 article reviews
    matlab based software-calatom - by Bioz Stars, 2026-04
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    software tool calatom  (MathWorks Inc)
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    MathWorks Inc software tool calatom
    HAADF-STEM images (left) and corresponding atomic positions of Se (right, identified by <t>Calatom</t> software) of InSe:Y before ( a ) and after ( b ) in-situ biasing process, showing obvious electric field induced ripplocation formation and motion but without any atomic rearrangement of each single layer (left, inset). The arc arrows in ( b ) roughly mark the position where the ripplocation occurs. c SAED patterns of InSe:Y before (upper) and after (lower) in-situ biasing process. d Polar map (upper) of ( d ) with the arrows only showing the polarization directions (from anion to cation) with the schematic (lower) showing the influence of the ripplocation on the polarization switching. e , f Atomic-level zoom-in HAADF-STEM images marked with the polarization directions (upper) in ( d ) together with the simulated ones (lower) of two unit-cells of γ-InSe with totally reversed layer stacking and polarization states.
    Software Tool Calatom, supplied by MathWorks Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/result/software tool calatom/product/MathWorks Inc
    Average 90 stars, based on 1 article reviews
    software tool calatom - by Bioz Stars, 2026-04
    90/100 stars
    		  Buy from Supplier

    Image Search Results


    HAADF-STEM images (left) and corresponding atomic positions of Se (right, identified by Calatom software) of InSe:Y before ( a ) and after ( b ) in-situ biasing process, showing obvious electric field induced ripplocation formation and motion but without any atomic rearrangement of each single layer (left, inset). The arc arrows in ( b ) roughly mark the position where the ripplocation occurs. c SAED patterns of InSe:Y before (upper) and after (lower) in-situ biasing process. d Polar map (upper) of ( d ) with the arrows only showing the polarization directions (from anion to cation) with the schematic (lower) showing the influence of the ripplocation on the polarization switching. e , f Atomic-level zoom-in HAADF-STEM images marked with the polarization directions (upper) in ( d ) together with the simulated ones (lower) of two unit-cells of γ-InSe with totally reversed layer stacking and polarization states.

    Journal: Nature Communications

    Article Title: Atomic-level polarization reversal in sliding ferroelectric semiconductors

    doi: 10.1038/s41467-024-48218-z

    Figure Lengend Snippet: HAADF-STEM images (left) and corresponding atomic positions of Se (right, identified by Calatom software) of InSe:Y before ( a ) and after ( b ) in-situ biasing process, showing obvious electric field induced ripplocation formation and motion but without any atomic rearrangement of each single layer (left, inset). The arc arrows in ( b ) roughly mark the position where the ripplocation occurs. c SAED patterns of InSe:Y before (upper) and after (lower) in-situ biasing process. d Polar map (upper) of ( d ) with the arrows only showing the polarization directions (from anion to cation) with the schematic (lower) showing the influence of the ripplocation on the polarization switching. e , f Atomic-level zoom-in HAADF-STEM images marked with the polarization directions (upper) in ( d ) together with the simulated ones (lower) of two unit-cells of γ-InSe with totally reversed layer stacking and polarization states.

    Article Snippet: Detailed atomic arrangement analyses for HAADF-STEM images combined with atomic quantification were performed using the Calatom software based on custom MATLAB scripts.

    Techniques: Software, In Situ